Growth and photoluminescence characterization of a GaAsxP1−x/GaP strained-layer superlattice

Publisher Website
Google Scholar
Abstract
We have succeeded in growing a GaAsxP1−x/GaP strained-layer superlattice (SLS). The structure was grown by alternate metal–organic chemical vapor deposition of thin (60 Å) layers (20 each) of GaAs0.4P0.6 and GaP. These layers were deposited onto a GaAsxP1−x layer which was graded in composition from x = 0 (composition of underlying GaP substrate) to x = 0.2 (average composition of SLS). Photoluminescence studies of the SLS were carried out to determine the optical band gap. At T = 78 K, the emission from the SLS exhibits a dominant peak at 2.03 eV, as well as weaker peaks at higher energies. We attribute these peaks to direct transitions between SLS conduction and valence band states. The measured energies for the fundamental gap and higher energy transitions are in good agreement with recent theoretical results.

This publication has 0 references indexed in Scilit: