Dielectric isolation using shallow oxide and polycrystalline silicon

• 1 January 1976
• proceedings article
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• p. 601-604
• https://doi.org/10.1109/iedm.1976.189116

Abstract

Keywords

• THERMAL DIFFUSION
• GEOMETRY
• RESISTORS
• ION IMPLANTATION
• DEGRADATION
• SILICON
• CIRCUITS
• ETCHING
• OXIDATION