Strain relaxation and misfit dislocations in compositionally graded Si1 − xGex layers on Si(001)
- 22 December 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 157 (1-4) , 137-141
- https://doi.org/10.1016/0022-0248(95)00402-5
Abstract
No abstract availableKeywords
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