Pressure-driven metal-insulator transition in La-doped SmS: Excitonic condensation
- 15 February 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 51 (8) , 5542-5545
- https://doi.org/10.1103/physrevb.51.5542
Abstract
The long-predicted excitonic condensed phase, the excitonic insulator, has been verified once more. After the discovery of two intermediate valent alloys a few years ago, for which the excitonic phase has been verified under pressure at low temperatures, another rare-earth chalcogenide alloy system, namely, S, has now turned out to be also an excitonic insulator under pressure at low temperatures. The effect is caused by Coulomb interaction of electron and holes in an intermediate valent state when pressure is decreasing the interaction volume and low temperature is preventing the ionization of the condensed phase.
Keywords
This publication has 18 references indexed in Scilit:
- Intermediate valence and the possibility of a magnetic excitonic insulatorIEEE Transactions on Magnetics, 1994
- Excitonic insulator phase inPhysical Review Letters, 1991
- Pressure-driven semiconductor-metal transition in intermediate-valence and the concept of an excitonic insulatorPhysical Review B, 1990
- Electronic Raman scattering under high-pressure in SmSeJournal of Magnetism and Magnetic Materials, 1987
- Effect of Configuration Crossover on the Electronic Raman Scattering byMultipletsPhysical Review Letters, 1981
- Conduction-Electron Enhancement of Exchange Interactions in SmSPhysical Review B, 1973
- Pressure-Induced Metal-Semiconductor Transition andElectron Delocalization in Sm TePhysical Review Letters, 1970
- Simple Model for Semiconductor-Metal Transitions: Smand Transition-Metal OxidesPhysical Review Letters, 1969
- Possible Anomalies at a Semimetal-Semiconductor TransistionReviews of Modern Physics, 1968
- The transition to the metallic statePhilosophical Magazine, 1961