Optoelectronic properties of coupled cavity semiconductor lasers
- 15 April 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (8) , 735-737
- https://doi.org/10.1063/1.94899
Abstract
Differential voltage-current characteristics of coupled cavity semiconductor lasers are studied experimentally. Lasing thresholds of individual cavities, regions of single mode or multimode oscillation, or mode hop locations are easily obtained from the analysis. The optoelectronic properties can be used for monitoring operating states of the lasing system without requiring external optical elements.Keywords
This publication has 8 references indexed in Scilit:
- Wavelength self stabilisation of coupled-cavity semiconductor lasersElectronics Letters, 1984
- Analysis of multielement semiconductor lasersJournal of Applied Physics, 1983
- High-speed direct single-frequency modulation with large tuning rate and frequency excursion in cleaved-coupled-cavity semiconductor lasersApplied Physics Letters, 1983
- Single-mode operation of coupled-cavity GaInAsP/InP semiconductor lasersApplied Physics Letters, 1983
- Generation of single-longitudinal-mode subnanosecond light pulses by high-speed current modulation of monolithic two-section semiconductor lasersElectronics Letters, 1982
- Bistability and negative resistance in semiconductor lasersApplied Physics Letters, 1982
- Derivative measurements of the current-voltage characteristics of double-heterostructure injection lasersIEEE Journal of Quantum Electronics, 1976
- Saturation of the junction voltage in stripe-geometry (AlGa)As double-heterostructure junction lasersApplied Physics Letters, 1976