Effects of oxygen incorporation in p-type AlN crystals doped with carbon species
- 1 December 1999
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 273-274, 113-115
- https://doi.org/10.1016/s0921-4526(99)00419-6
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Electronic structures of p-type GaN codoped with Be or Mg as the acceptors and Si or O as the donor codopantsJournal of Crystal Growth, 1998
- Stability of deep donor and acceptor centers in GaN, AlN, and BNPhysical Review B, 1997
- Materials Design for the Fabrication of Low-Resistivity p-Type GaN Using a Codoping MethodJapanese Journal of Applied Physics, 1997
- Abinitiostudy of oxygen point defects in GaAs, GaN, and AlNPhysical Review B, 1996
- Acceptor Binding Energy And Band Lineup Of III-V Nitride Alloys And Mocvd Growth Of GaN On GaAs - Or GaP-Coated SiMRS Proceedings, 1994
- Luminescence Studies of Oxygen‐Related Defects In Aluminum NitrideJournal of the American Ceramic Society, 1990
- Cohesive properties of metallic compounds: Augmented-spherical-wave calculationsPhysical Review B, 1979
- A local exchange-correlation potential for the spin polarized case. iJournal of Physics C: Solid State Physics, 1972
- Explicit local exchange-correlation potentialsJournal of Physics C: Solid State Physics, 1971
- Self-Consistent Equations Including Exchange and Correlation EffectsPhysical Review B, 1965