Diffusion of transition elements in GaAs and InP

23 July 1981

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 17 (15) , 532-533
https://doi.org/10.1049/el:19810372

Abstract

A technique is presented for studying the diffusion of iron and chromium in GaAs and InP at temperatures down to 600°C. The technique is reproducible, and results are presented which show that in all four cases very fast diffusion occurs.

Keywords

DIFFUSION OF TRANSITION ELEMENTS
FE DIFFUSION
CR DIFFUSION
SEMICONDUCTOR DOPING
GAAS
INP