MOCVD-grown AlGaAs/GaAs hot-electron transistor with a base width of 30 nm
- 15 August 1985
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 21 (17) , 757-758
- https://doi.org/10.1049/el:19850533
Abstract
An AIGaAs/GaAs hot-electron transistor (HET) with a base width of 30 nm was successfully fabricated by MOCVD. The common-emitter current gain increased gradually with base-collector voltage, and reached a level of 1.6 at 77 K and 2.0 at 4.2 K. This current gain is the highest and this base width is the thinnest among those reported so far on the AIGaAs/GaAs HET.Keywords
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