Photoluminescence Quenching in Polysilanes by Fullerene Doping and Effective Photoinduced Charge Transfer Depending on Aromatic Side Group
- 1 January 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (1B) , L141
- https://doi.org/10.1143/jjap.34.l141
Abstract
Photoluminescence of polysilanes with aromatic side groups has been found to be strongly quenched upon C60 doping, in contrast to the case of polysilanes with saturated hydrocarbon side groups in which a clear quenching effect has not been observed. These results have been interpreted by considering the role of the aromatic side group as a mediator for photoinduced electron transfer from electronic states of the main chain polysilanes to the C60 molecule.Keywords
This publication has 14 references indexed in Scilit:
- Photoinduced charge transfer and charge carrier generation in polysilane films containing C60 moleculesApplied Physics Letters, 1993
- Effective Photoresponse in C60-Doped Conducting Polymer due to Forbidden Transition in C60Japanese Journal of Applied Physics, 1993
- Fullerene-doped polysilane photoconductorJournal of the American Chemical Society, 1993
- Marked Enhancement of Photoconductivity and Quenching of Luminescence in Poly(2,5-dialkoxy-p-phenylene vinylene) upon C60 DopingJapanese Journal of Applied Physics, 1993
- Polarons inPhysical Review B, 1992
- Theoretical Fermi-Surface Properties and Superconducting Parameters for K 3 C 60Science, 1991
- Organic Molecular Soft Ferromagnetism in a Fullerene C 60Science, 1991
- Superconductivity at 18 K in potassium-doped C60Nature, 1991
- Photocarrier generation and transport inσ-bonded polysilanesPhysical Review B, 1987
- Phenylmethylpolysilanes: formable silane copolymers with potential semiconducting propertiesJournal of the American Chemical Society, 1981