ANR photoresist process optimization at 248 nm
- 1 June 1990
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- p. 301-311
- https://doi.org/10.1117/12.20123
Abstract
The purpose of this article is to propose a residue-free process using ANR resists specifically designed for deep UV lithography. The influence of development steps, process conditions and resist formulation on residues were studied. An optimized process point with a new resist formulation is proposed. Using this residue-free process point, very high resolution was achieved for deep UV and e-beam lithography. Moreover, the temporal effects on the coated wafers were investigated.Keywords
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