Distortion in short channel FET circuits

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Abstract
This chapter have briefly studied distortion mechanisms in short channel FETs. We have identified a number of topologies and situations where device circuit interaction can lead to crippling levels of frequency dependent distortion. The common source amplifier was found to be immune to this effect. It has shown how the 2-port nature of the transconductance non-linearity of a short channel MESFET can lead to nulls in distortion with load and bias. Predicting the location of these nulls places an unprecedented demand on model accuracy. It has found that the Parker Skellern MESFET model provides a satisfactory guide to the nature of the load and bias dependence of distortion. The design principles described are also applicable to other IC technologies presented in this volume.

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