Ultra-low-temperature low-ohmic contacts for SOA applications
- 20 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
High-power excimer laser annealing is used to produce low-ohmic implanted contacts to both n- and p-type silicon diodes at thermal processing temperatures not exceeding 300/spl deg/C. This is the maximum allowable temperature after gluing to glass in silicon-on-anything (SOA) processing. Bipolar NPN transistors have been fabricated with the emitter and base contacted on the front-wafer and the collector contacted directly under the emitter via the back-wafer after SOA processing.Keywords
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