Exciton-stimulated diffusion of xenon impurity in krypton cryocrystals
- 1 March 1987
- journal article
- Published by AIP Publishing in Soviet Journal of Low Temperature Physics
- Vol. 13 (3) , 163-167
- https://doi.org/10.1063/10.0031668
Abstract
The intensity distribution of intrinsic and extrinsic luminescence as a function of the duration of irradiation by low-energy electrons was studied in xenon-krypton solid solutions. Low-temperature accelerated diffusion of xenon impurity atoms was observed at low concentrations. It is shown that this diffusion is stimulated by free excitons of the matrix, and a possible mechanism for this process is proposed. The restructuring of the structure of the solution is described qualitatively based on a model of the transport of excitations in the matrix. The coefficient of exciton-stimulated diffusion is evaluated. The influence of defects in the crystal lattice on the kinetics of the diffusion process is studied.Keywords
This publication has 7 references indexed in Scilit:
- Defect formation in solids by decay of electronic excitationsUspekhi Fizicheskih Nauk, 1985
- Electronic Excitations in Condensed Rare GasesPublished by Springer Nature ,1985
- Kinetics of impurity particles in low-temperature matricesPhysica Status Solidi (a), 1984
- Practical range and energy loss of 0.1-3-keV electrons in thin films of,, Ar, Kr, and XePhysical Review B, 1980
- Excitons in rare-gas crystalsAdvances in Physics, 1978
- Emission spectra of xenon impurity states in solid and liquid kryptonThe Journal of Chemical Physics, 1973
- Trapped Excitons in Dilute Rare-Gas AlloysPhysical Review B, 1965