Threshold energy for atomic displacement in InP

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Abstract
The anisotropy of the defect introduction rates of two hole traps (H4 and H5) detected by deep-level transient spectroscopy measurements in room-temperature electron-irradiated p-type InP has been used to determine the sublattice to which the created defects belong. It appears that the H5 defect belongs to the indium sublattice and it is confirmed that the H4 defect belongs to the phosphorus sublattice. Using the variations of the introduction rates of H4 and H5 with the electron energy, a threshold energy of 8 eV is deduced for P-atom displacement and of 3 and 4 eV for In-atom displacement in the two crystallographic directions In[111] and P[111], respectively. A model taking into account the secondary collisions of the primary knock-on atom with the first and second neighbors is proposed to explain the complex behavior of the anisotropy ratio curve measured for the H5 defect.