Surface-modified GaAs terahertz plasmon emitter
- 29 July 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (5) , 871-873
- https://doi.org/10.1063/1.1497192
Abstract
We studied the THz emission from n-GaAs plasmon emitters modified by low-temperature-grown (LT) GaAs surface layers. The THz emission is increased since the LT GaAs pins the Fermi level at a midgap position, increasing the surface depletion field. For a THz emitter with a 70-nm-thick LT GaAs layer we observe without external fields a THz emission intensity of 140 nW. In addition, the long-term performance of the modified emitters is improved by the LT GaAs surface layer.Keywords
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