Abstract
Using a cheap and easily reproducible glass-spray system, the authors have successfully fabricated and characterised tin oxide (SnO2) thin films of varying constituents and properties. The properties of such films, when optimised, compared favourably with those from well established and widely reported systems and procedures. They have further the dependence of electrical properties of the fabricated films on the concentration of working chemicals, thickness of the fabricated films, pressure of the carrier gas used and the degree of degradation under local atmospheric conditions. The dependence of optical properties of the films on some of these variables is also investigated. Doping procedure and optimum concentration of dopants are explained. Results of the authors' numerous investigations revealed that the resistivity remains fairly constant at its optimum low value over a wide range of film thickness. Resistivity of the film decreases from about 154 Omega cm for undoped film to as low as 50 Omega cm for films well doped with 0.7 g antimony pentachloride, in 1 ml of working solution. This doping does not decrease the optical qualities of the film. Possible applications of tin oxide films in the fabrication of silicon solar cells are also discussed.
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