A high-yield GaAs MSI digital IC process

• 1 January 1982
• proceedings article
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• https://doi.org/10.1109/iedm.1982.190241

Abstract

Keywords

• RADIO FREQUENCY
• STATISTICAL ANALYSIS
• SURFACE RESISTANCE
• EMPIRICAL MODEL
• TESTING
• GALLIUM ARSENIDE
• PROCESS CAPABILITY
• CONTACT RESISTANCE