Multicrystal X-ray diffraction of heteroepitaxial structures
- 1 June 1991
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 50 (1-4) , 9-18
- https://doi.org/10.1016/0169-4332(91)90133-5
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Indium incorporation in GaInAs/GaAs quantum wells grown on GaAsJournal of Crystal Growth, 1991
- Interface roughness and period variations in the AlGaAs system grown by molecular beam epitaxySemiconductor Science and Technology, 1991
- A high-resolution multiple-crystal multiple-reflection diffractometerJournal of Applied Crystallography, 1989
- Interface roughness and period variations in MQW structures determined by X-ray diffractionJournal of Applied Crystallography, 1988
- Composition and lattice-mismatch measurement of thin semiconductor layers by x-ray diffractionJournal of Applied Physics, 1987
- Resolution function of an X-ray triple-crystal diffractometerActa Crystallographica Section A Foundations of Crystallography, 1987
- Alignment of double-crystal diffractometersJournal of Applied Crystallography, 1985
- Characterization of thin layers on perfect crystals with a multipurpose high resolution x-ray diffractometerJournal of Vacuum Science & Technology B, 1983
- Absolute lattice parameter measurements of epitaxial layersJournal of Applied Crystallography, 1982