Two dimensional simulation of power devices with circuit boundary conditions

This publication has 3 references indexed in Scilit:

• Fast switching lateral insulated gate transistor
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1986
• Analysis and Simulation of Semiconductor Devices
  Published by Springer Nature ,1984
• The COMFET—A new high conductance MOS-gated device
  IEEE Electron Device Letters, 1983