Transferred-electron photoemission to 1.65 μm from InGaAs
- 1 April 1978
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (4) , 2591-2592
- https://doi.org/10.1063/1.325077
Abstract
Photoemission to 1.65 μm has been achieved in the reflection mode from a bias‐assisted p‐InGaAs cathode. Quantum yield at 1.55 μm is ∼10−3 at 125 K and ∼10−4 at 300 K.This publication has 7 references indexed in Scilit:
- Liquid-phase-epitaxial growth of lattice-matched In0.53Ga0.47As on (100) -oriented InPApplied Physics Letters, 1977
- Crack formation in InP-GaxIn1−xAs-InP double-heterostructure fabricationApplied Physics Letters, 1976
- Transferred-electron photoemission to 1.4 μmApplied Physics Letters, 1976
- Growth and characterization of InGaAsP–InP lattice-matched heterojunctionsJournal of Vacuum Science and Technology, 1976
- Liquid phase epitaxial growth of InGaAs on InPJournal of Crystal Growth, 1976
- Glass−sealed GaAs−AlGaAs transmission photocathodeApplied Physics Letters, 1975
- Transferred electron photoemission from InPApplied Physics Letters, 1974