Abstract
Single crystals of germanium and silicon have been plastically deformed at elevated temperatures. Germanium becomes ductile above 500°C, and silicon requires temperature above 900°C. At temperatures below 600°C, germanium exhibits an induction period at constant load. Deformed germanium, originally n-type, remains n-type. The resistivity is increased by deforming, and the lifetime of photo-injected carriers is drastically reduced.

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