Theory of Magneto-Optical Effects in Extrinsic Semiconductors

Abstract
The magneto-optical effects in doped semiconductors have been investigated theoretically. It is shown that if there is a Fermi occupation of the conduction band by electrons, then the form of the interband optical absorption near the Burstein-Moss absorption edge is strongly dependent on the mean-square impurity potential at low temperatures. The magnetic field dependence of this line shape was studied. The Faraday rotation and ellipticity for doped semiconductors were studied in the same frequency range.

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