On the determination of internal optical mode loss of semiconductor lasers
- 5 May 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (18) , 2365-2367
- https://doi.org/10.1063/1.118875
Abstract
Use is made of a numerical simulation of the light—current characteristic to examine the errors which may arise in the determination of the optical mode loss (αi) from the cavity length dependence of the external differential efficiency (ηextd). In particular, we focus on the effects of incomplete Fermi level pinning and carrier leakage, and show that αi can only be determined correctly if ηextd is determined under conditions where it is invariant both with current level and temperature.Keywords
This publication has 3 references indexed in Scilit:
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- Drift leakage current in AlGaInP quantum-well lasersIEEE Journal of Quantum Electronics, 1993
- Novel technique for determining internal loss of individual semiconductor lasersElectronics Letters, 1992