A new very high voltage semiconductor switch
- 1 June 1985
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A new family of semiconductor switches using double injection techniques and compensated deep impurities is described. They have the potential to raise switching voltages a factor of ten higher (up to 100 kV) than p-n junction devices while exhibiting extremely low (or zero) forward voltage. Several potential power switching applications are indicated. Author(s) Sundberg, Gale R. National Aeronautics and Space Administration, Lewis Research Center, Cleveland, Ohio 44135, USAKeywords
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