The use of the neutron induced reaction for boron profiling in Si
- 1 September 1981
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 188 (1) , 185-189
- https://doi.org/10.1016/0029-554x(81)90337-2
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- The use of neutron induced reactions for light element profiling and lattice localizationNuclear Instruments and Methods, 1978
- Stopping cross sections and backscattering factors for 4He ions in matter Z = 1–92, E(4He) = 400–4000 keVAtomic Data and Nuclear Data Tables, 1974
- Technique for determining concentration profiles of boron impurities in substratesJournal of Applied Physics, 1972