POINT DEFECTS AND HIGH TEMPERATURE CREEP OF CoO SINGLE CRYSTALS

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Abstract
The oxygen partial pressure dependence of the steady state creep rate was measured in Co0 single crystals. The exponent m in the relation [MATH] α PO2m is positive and decreases from 0.5 to 0.1 as the temperature increases from 1100°C to 1400°C. At constant temperature, m increases slightly when PO2 increases from 1 Pa to 0.21 x 105 Pa. These results indicate that the defect responsible for oxygen diffusion, which is assumed to control creep rate, is mainly an oxygen interstitial. This defect is neutral at 1100°C and probably associated with other defects like charged interstitials, at higher temperatures

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