2 GHz, High Power Silicon SIT's

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Abstract
Silicon SIT's (Static Induction Transistors) have been developed, which deliver a power output of 9.1 W (3.6 dB gain, 30% drain efficiency) at 2.1 GHz and 12 W (2.3 dB gain, 28% drain efficiency) at 2.0 GHz. A fine patterned structure of the SIT's was fabricated with the “washed gate” process and chemical dry etching technique. The structure to improve source-to-gate breakdown voltage was also adopted. The channel resistivity and the thickness of epitaxial layer were optimized for operations at around 2 GHz. An internal matching technique was applied to reduce the effects of matching circuit loss.

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