Weak antilocalization in a 2D electron gas with the chiral splitting of the spectrum

Preprint

2 March 1998

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/9712135

Abstract

Motivated by the recent observation of the metal-insulator transition in Si-MOSFETs we consider the quantum interference correction to the conductivity in the presence of the Rashba spin splitting. For a small splitting, a crossover from the localizing to antilocalizing regime is obtained. The symplectic correction is revealed in the limit of a large separation between the chiral branches. The relevance of the chiral splitting for the 2D electron gas in Si-MOSFETs is discussed.

Keywords

METAL INSULATOR TRANSITION
WEAK ANTILOCALIZATION
CHIRAL SPLITTING
2D ELECTRON GAS
ANTILOCALIZING
ELECTRON GAS
MOTIVATED
MOSFETS

All Related Versions

Version 1, 1997-12-12, ArXiv
Version 2, 1998-03-02, ArXiv
Published version: JETP Letters, 67 (2), 133.

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