A highly sensitive chalcogenide photoconductor in a near-infrared wavelength region

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Abstract
A new highly sensitive photoconductor in a near-infrared wavelength region with a low dark decay has been developed for an electrophotographic device. The photoconductor has been created with a multilayered Se-As-Te chalcogenide glass. The structure of the photoconductive layer consists of four parts: (a) Se-rich blocking layer, (b) Te-rich IR-sensitive layer, (c) As-rich space-charge layer, and (d) Se-rich voltage sustaining layer. A Cerium oxide layer is interposed as a carrier blocking layer on the substrate. This photoconductor has shown sensitivity of about 300 m2/J to beams having a wavelength of 750 nm. This sensitivity is as high as that of the amorphous Se photoconductor to light having a wavelength of 442 nm. This photoconductor has favorable characteristics such as a high initial surface potential, low dark decay, low residual surface potential, and long durability in practical use. It is suitable for a photoconductor in a laser beam printer with a diode laser.

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