Photovoltages exceeding the band gap observed with WSe2/I? solar cells
- 1 September 1981
- journal article
- Published by Springer Nature in Journal of Applied Electrochemistry
- Vol. 11 (5) , 653-660
- https://doi.org/10.1007/bf00616686
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- The Role of Carrier Diffusion and Indirect Optical Transitions in the Photoelectrochemical Behavior of Layer Type d-Band SemiconductorsJournal of the Electrochemical Society, 1980
- Photoelectrochemical Compatibility of n ‐ WSe2 and n ‐ MoSe2 with Various Redox SystemsJournal of the Electrochemical Society, 1980
- The concept of Fermi level pinning at semiconductor/liquid junctions. Consequences for energy conversion efficiency and selection of useful solution redox couples in solar devicesJournal of the American Chemical Society, 1980
- Relationship between surface morphology and solar conversion efficiency of tungsten diselenide photoanodesJournal of the American Chemical Society, 1980
- The Role of Surface Orientation in the Photoelectrochemical Behavior of Layer Type d‐Band SemiconductorsBerichte der Bunsengesellschaft für physikalische Chemie, 1979
- On the Photopotential Output of Electrochemical Solar Cells Based on Layer‐Type d‐Band SemiconductorsBerichte der Bunsengesellschaft für physikalische Chemie, 1979
- Electrochemical solar cells based on layer-type transition metal compounds: Performance of electrode materialSolar Energy Materials, 1979
- Electrochemical Solar Cell Based on the d‐Band Semiconductor Tungsten‐DiselenideBerichte der Bunsengesellschaft für physikalische Chemie, 1978
- Photovoltaic properties of some semiconducting layer structuresPhysica Status Solidi (a), 1978
- Photovoltages Larger than the Band Gap in Thin Films of GermaniumJournal of Applied Physics, 1972