Luminescence study of rapid lamp annealing of Si-implanted InP
- 15 January 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (2) , 531-536
- https://doi.org/10.1063/1.334787
Abstract
Luminescence of Si-implanted InP after rapid lamp annealing was studied. It was found that the intensity and energy of band-to-band room-temperature luminescence were good indicators of the quality of annealing and activation of Si donors. Shallow and deep level spectral features characteristic of Si implantation and good annealing were observed in the low-temperature spectra. It was found that the best results could be obtained only in the case of hot implantation and lamp annealing in regimes close to the melting point of the InP, whereas room-temperature implantation and oven annealing were much less effective.This publication has 6 references indexed in Scilit:
- Band-to-band luminescence of ion-implanted InP after rapid lamp annealingApplied Physics Letters, 1984
- Rapid thermal annealing of Se and Be implanted InP using an ultrahigh power argon arc lampApplied Physics Letters, 1983
- Effect of high doping on the photoluminescence edge of GaAs and InPApplied Physics Letters, 1983
- Electrical properties and photoluminescence of Te-doped GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1982
- Liquid phase epitaxially efficient visible emission from highly doped liquid phase epitaxially grown InPApplied Physics Letters, 1980
- Incorporation of Si in Liquid Phase Epitaxial InP LayersJournal of the Electrochemical Society, 1976