GaAs hall element fabricated by ion implantation
- 1 June 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 27 (6) , 1188-1192
- https://doi.org/10.1109/t-ed.1980.20005
Abstract
A planar-structure Hall element has been fabricated using submicrometer active layers formed by selenium ion implantation in semi-insulating GaAs. Selenium ion implantation was performed at 300°C and the annealing was carried out at a temperature between 750 and 900°C for about 30 rain in H 2 atmosphere with RF-sputtered silicon oxide on silicon nitride encapsulation. The Hall element generates a very high output voltage, say 5 V for 15 kG at 20 mA, with a small temperature coefficient less than 0.02 percent/°C in a temperature range from -50 to 200°C. The linearity coefficient of magnetic field dependence of the output voltage is smaller than 0.1 percent/kG.Keywords
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