Enhanced oxidation on ion-implanted silicon
- 1 January 1970
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 3 (1) , 139-140
- https://doi.org/10.1080/00337577008235627
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling TechniqueJournal of Applied Physics, 1969
- ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERINGCanadian Journal of Physics, 1967