Focused ion beam microsurgery for electronics
- 1 May 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 7 (5) , 285-287
- https://doi.org/10.1109/EDL.1986.26375
Abstract
Methods of making and breaking connections on an Al conductor test pattern using a focused ion beam (FIB) are demonstrated. Submicrometer dimension connections between crossing conductors separated by oxide were fabricated in 7 s. Resistances of the connections were measured to be 3 Ω and were tested up to 50 mA. Milled cuts in 0.65- µm-thick 10-µm-wide conductors produced open-circuit resistances > 20 MΩ in 300 s. The combined imaging, restructuring, and verification capability of FIB microsurgery is shown.Keywords
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