Photoresponse characteristics of n-ZnO/p-Si heterojunction photodiodes
- 1 November 2002
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 20 (6) , 2384-2387
- https://doi.org/10.1116/1.1524152
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Photoelectric, stoichiometric and structural properties of n-ZnO film on p-SiThin Solid Films, 2001
- Photoresponse of Si detector based on n-ZnO/p-Si and n-ZnO/n-Si structuresOptical Materials, 2001
- ZnO Schottky ultraviolet photodetectorsJournal of Crystal Growth, 2001
- Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin filmsApplied Physics Letters, 2001
- ZnO thin films on semiconductor substrate for large area photodetector applicationsThin Solid Films, 2001
- Ultraviolet detectors based on epitaxial ZnO films grown by MOCVDJournal of Electronic Materials, 2000
- High contrast, ultrafast optically addressed ultraviolet light modulator based upon optical anisotropy in ZnO films grown on R-plane sapphireApplied Physics Letters, 1999
- High temperature excitonic stimulated emission from ZnO epitaxial layersApplied Physics Letters, 1998
- Electrical and optical properties of ZnO: Al films prepared by an evaporation methodThin Solid Films, 1996
- Effect of hydrogen plasma treatment on transparent conducting oxidesApplied Physics Letters, 1986