0.66 μm room-temperature operation of InGaAlP DH laser diodes grown by MBE
- 3 March 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 19 (5) , 163-165
- https://doi.org/10.1049/el:19830114
Abstract
Room-temperature pulsed operation of In0.49Ga0.31Al0.20P/In0.49Ga0.48Al0.03P/In0.49Ga0.31Al0.20P double heterostructure (DH) laser diodes has been achieved for the first time. The DH layers were grown by molecular beam epitaxy. The lasing wavelength was 0.66 μm and the threshold current density was 3.2−3.6 × 104 A/cm2 at room temperature.Keywords
This publication has 1 reference indexed in Scilit:
- HETEROSTRUCTURE MATERIALSPublished by Elsevier ,1978