4H-SiC Substrate Orientation Effects on Hydrogen Etching and Epitaxial Growth

• 10 May 2000
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 338-342, 185-188
• https://doi.org/10.4028/www.scientific.net/msf.338-342.185

Abstract

Keywords

• EPITAXIAL GROWTH
• HYDROGEN ETCHING
• STEP HEIGHT
• SUBSTRATE ORIENTATION