Intersubband absorption in strained InxGa1−xAs/Al0.4Ga0.6As (0≤x≤0.15) multiquantum wells
- 27 February 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (9) , 855-856
- https://doi.org/10.1063/1.100843
Abstract
We report, for the first time, temperature‐dependent intersubband absorption data in doped pseudomorphic InxGa1−xAs/Al0.4Ga0.6As (0≤x≤0.15) multiquantum wells. In this composition range the absorption resonance varies in the range 6–7 μm for 50 Å wells, which agrees extremely well with theoretical calculations.Keywords
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