Titanium silicide contacts on semiconducting diamond substrates

15 August 1991

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 27 (17) , 1515-1516
https://doi.org/10.1049/el:19910952

Abstract

Titanium silicide contacts have been deposited on semiconducting (p-type) natural diamond substrates by the codeposition of silicon and titanium by electron-beam evaporation. Current-voltage (I–V) measurements conducted at room temperature have demonstrated rectifying characteristics. Consistent with the observed small turn-on voltage, the corresponding I–V measurements recorded at 400°C exhibit ohmic-like behaviour. However, on subsequent annealing of the titanium silicide contacts at 1100°C in a vacuum of ∼10⁻⁶ Torr for 30min, stable rectifying I–V characteristics were observed in the 25–400°C temperature range.

Keywords

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Special Applications
Published by Elsevier ,1983