Narrow pulse measurement of drain characteristics of GaAs MESFETs
- 18 June 1987
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 23 (13) , 686-687
- https://doi.org/10.1049/el:19870489
Abstract
A measurement technique is presented which uses narrow, fast-rise-time pulses applied to both the gate and the drain of a GaAs MESFET to obtain the drain characteristics of the device. This allows the characteristics of the device to be obtained which correspond to frequencies above those at which surface and substrate traps can respond. The resulting characteristics show significant departures from those obtained using conventional long pulse and DC measurement techniques.Keywords
This publication has 1 reference indexed in Scilit:
- SURFACE FERMI LEVEL OF III–V COMPOUND SEMICONDUCTOR–DIELECTRIC INTERFACESPublished by Elsevier ,1983