Heterostructure Junction Lasers
- 1 January 1974
- book chapter
- Published by Elsevier
- Vol. 4, 235-328
- https://doi.org/10.1016/b978-0-12-002904-4.50011-5
Abstract
No abstract availableThis publication has 97 references indexed in Scilit:
- The graded-gap Alx Ga1 − x As–GaAs heterojunctionJournal of Applied Physics, 1972
- Small-area, double-heterostructure aluminum-gallium arsenide electroluminescent diode sources for optical-fiber transmission linesOptics Communications, 1971
- Electromagnetic theory of heterostructure injection lasersSolid-State Electronics, 1971
- Electroreflectance Spectra of AlxGa1−xAs AlloysCanadian Journal of Physics, 1971
- DOUBLE-HETEROSTRUCTURE INJECTION LASERS WITH ROOM-TEMPERATURE THRESHOLDS AS LOW AS 2300 A/cm2Applied Physics Letters, 1970
- Delay of the stimulated emission in GaAs laser diodes near room temperatureSolid-State Electronics, 1967
- Effect of Band Tails on Stimulated Emission of Light in SemiconductorsPhysical Review B, 1966
- DELAY BETWEEN CURRENT PULSE AND LIGHT EMISSION OF A GALLIUM ARSENIDE INJECTION LASERApplied Physics Letters, 1964
- n-n Semiconductor heterojunctionsSolid-State Electronics, 1963
- Diffusion and oxide masking in silicon by the box methodSolid-State Electronics, 1960