Photoluminescenee from AlGaAs–GaAs Single Quantum Welts with Growth Interrupted Heterointerfaces Grown on GaAs (100) and (311) Substrates at Various Growth Temperatures by Molecular Beam Epitaxy

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Abstract
Photoluminescence (PL) measurements at 1.8 K have been carried out for AlGaAs–GaAs single quantum well (SQW) structures grown on GaAs (100) and (311) substrates at various growth temperatures (Tg) by molecular beam epitaxy. Several exciton lines originating from monolayer terrace formation are observed for the SQW grown on (100) surface with 2 min growth interruption (GI) at heterointerfaces under As4pressure. The number of these exciton lines increases withTg, suggesting that the character of columnar growth appears weakly with increasingTg. Fine structures, however, are not observed for SQW's grown on (311)A and (311)B surfaces with 2 min GI at heteroinerfaces. The line widths of PL peaks from SQW's grown on (311)A and (311)B surfaces with GI are significantly larger than those without GI. These facts indicate that the growth mode on (311) surfaces is of much less layer-by-layer character than that on (100) surfaces.