A new method to obtain Cu films with lower resistivity and higher interface adhesion on different substrates

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Abstract
An ion beam assisted deposition (IBAD) method was used to obtain metal (Cu or Ti) intermediate layers. These intermediate layers were between the evaporated Cu surface films (SF) and different types of substrates (Si, glass, and polycrystalline Al2O3). How these intermediate layers effect the microstructure and properties of the Cu surface films was studied. Trends in crystallographic texture, crystal size, and resistivity of Cu surface films with different IBAD layers on different substrates are significantly different. The IBAD intermediate layer changed the crystallinity of Cu SF and increased the interface adhesion between the Cu SF and substrates. Rutherford backscattering spectroscopy, transmission electron microscopy, scanning electron microscopy, and x-ray diffraction analyses methods have been used for the study of the synthesized films. The experimental results show that films with lower resistivity and higher interface adhesion could be obtained by this combined IBAD–physical vapor deposition technique. This method has the potential to be used in electronic packaging and other thin film industries.

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