Chemical States of Piled-up Phosphorus and Arsenic Atoms at the SiO2/Si Interface

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Abstract
We have investigated the positions of the piled-up phosphorus atoms at the SiO2/Si interface using the extended X-ray absorption fine structure (EXAFS) and X-ray photoelectron spectroscopy (XPS). The EXAFS and XPS data can be well explained on the assumption that the piled-up arsenic atoms exist at the tetrahedral sites. On the contrary, phosphorus atoms exist not at the tetrahedral sites but at the denser sites. The depth profile measurements of XPS have revealed that the piled-up arsenic and phosphorus atoms exist within 20Å from the interface.

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