Properties of p-on-n heterojunctions made with MCT grown by MOCVD
- 1 November 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 124 (1-4) , 664-669
- https://doi.org/10.1016/0022-0248(92)90533-o
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Growth of detector quality MCT in a vertical MOCVD reactorPublished by SPIE-Intl Soc Optical Eng ,1990
- P-on-n arsenic-activated junctions in MOCVD LWIR HgCdTe/GaAsSemiconductor Science and Technology, 1990
- High performance HgCdTe photoconductive devices grown by metalorganic chemical vapor depositionApplied Physics Letters, 1986