Thermal formation of vacancies inSi
- 1 September 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 52 (10) , R6947-R6950
- https://doi.org/10.1103/physrevb.52.r6947
Abstract
The formation of thermal vacancies in the intermetallic compound Si was studied below and at the ferromagnetic-paramagnetic phase transition by means of positron-lifetime spectroscopy. Low values of the vacancy formation enthalpies =0.77 eV in the ferromagnetic state and =0.74 eV in the paramagnetic state are derived in the case of stoichiometric . These values substantially increase to =1.11 eV and =1.07 eV in the case of Fe-rich . In addition, an upper limit of the vacancy migration enthalpy was derived from measurements after fast temperature changes. The results are discussed with respect to recent tracer diffusion measurements in Si.
Keywords
This publication has 3 references indexed in Scilit:
- Thermal Vacancy Formation in Ni3Al and γ-TiAl Compounds Studied by Positron Lifetime and Nearest-Neighbour Bond ModelsMaterials Science Forum, 1994
- Thermal Formation of Vacancies in Intermetallic CompoundsMaterials Science Forum, 1992
- Thermal vacancies and positron-lifetime measurements inPhysical Review B, 1990