Si(100)2×1-Cl structure from x-ray-absorption spectroscopy
- 15 July 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 48 (4) , 2275-2281
- https://doi.org/10.1103/physrevb.48.2275
Abstract
Surface-extended x-ray-absorption fine-structure (SEXAFS) and near-edge x-ray-absorption fine-structure (NEXAFS) spectroscopy at the Cl K edge have been used to investigate the structure of Si(100)2×1-Cl. A vicinal single-domain Si(100)2×1 substrate was employed to simplify data analysis. This substrate was exposed to at about 500 K to yield a coverage of about 0.25 monolayers. The room-temperature SEXAFS data indicates that Cl sits atop the upper Si atom of a buckled dimer at a bond distance of 2.00±0.02 Å. Analysis of the polarization-dependent NEXAFS data, which relies on the pseudointramolecular behavior of a resonance, is consistent with this geometry. However, it is inconsistent with the structural model derived from a recent electron-stimulated-desorption ion-angular-distribution study, in which Cl atoms are bound to both ends of a symmetric dimer. We point out that this discrepancy may arise from a difference in the coverage employed.
Keywords
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