The Role of Be in ( GaAl ) As / GaAs Solar Cells

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Abstract
Some fundamental properties of beryllium in solar cells were investigated. The diffusion of Be into during LPE growth of Be‐doped was first investigated in order to control the junction depth. The temperature dependence of the diffusion coefficient was found to take the form , where and . The diffusion coefficient was also found to be approximately proportional to the beryllium concentration in the growth melt. The acceptor energy level for Be in found from the temperature dependence of free carrier concentration was 47 meV, being smaller than that for Zn, 65–80 meV. p‐p‐n solar cells using Be as p‐type dopant have high conversion efficiency in excess of 20% (AMl), and the highest output power 5 Wcm−2 was obtained at 400 suns.

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