Positive Charges and E' Centers Formed by Vacuum Ultraviolet Radiation in SiO2 Grown on Si
- 1 October 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (10R) , 2265-2268
- https://doi.org/10.1143/jjap.29.2265
Abstract
Silicon dioxide films thermally grown on Si are irradiated with vacuum ultravioulet (VUV) photons (16.7 and 16.8 eV) as the films are supplied with bias voltages between -10 and 10 V. The resultant positive charges and E' centers in the films are studied by C-V (capacitance-voltage) and ESR measurements, respectively. The observed E' centers are distributed near the SiO2 surface, while the positive charges are localized at or very near the SiO2/Si interface. The positive charges and the E' centers show different characteristics in their bias and irradiation time dipendencies as well as in their depth distributions. These results indicate that the detected positive charges are different from holes trapped at oxygen vacancy sites between weak Si–Si bonds.Keywords
This publication has 11 references indexed in Scilit:
- Characterization of three E'-center variants in X- and γ-irradiated high purity a-SiO2Published by Elsevier ,2002
- Radiation Damage in SiO2/Si Induced by VUV PhotonsJapanese Journal of Applied Physics, 1989
- Electron and hole traps in SiO/sub 2/ films thermally grown on Si substrates in ultra-dry oxygenIEEE Transactions on Electron Devices, 1988
- Nature of the E′ deep hole trap in metal-oxide-semiconductor oxidesApplied Physics Letters, 1987
- Chemical and electronic structure of the SiO2/Si interfaceMaterials Science Reports, 1986
- Hole traps and trivalent silicon centers in metal/oxide/silicon devicesJournal of Applied Physics, 1984
- Paramagnetic trivalent silicon centers in gamma irradiated metal-oxide-silicon structuresApplied Physics Letters, 1984
- Location of positive charges in SiO2 films on Si generated by vuv photons, x rays, and high-field stressingJournal of Applied Physics, 1977
- Oxygen vacancy model for the E1′ center in SiO2Solid State Communications, 1974
- Vacuum Ultraviolet Radiation Effects in SiO2IEEE Transactions on Nuclear Science, 1971