Magnetotransport properties of single crystal Co2MnGe/NM/Co2MnGe trilayers epitaxially grown on GaAs (001)

Abstract
The magnetotransport properties of single crystaltrilayers 60 Å Co 2 MnGe/NM /30 Å Co 2 MnGe where NM is a nonmagnetic spacer material has been studied. The samples were grown by molecular beam epitaxy on GaAs (001) substrates. The 2 to 1 ratios in thickness of the Co 2 MnGe layers allows for the easy determination of which ferromagnetic layers have switched during magnetometry measurements. A weak 90° coupling has been observed in trilayers with either a Mn or a V spacer layer. In these coupled films a giant magnetoresistance type magnetoresistance of less than 1% has been measured at room temperature.